PVA-assisted metal transfer for vertical WSe₂ photodiode with asymmetric van der Waals contacts.

ABSTRACT: The vertical electronic and optoelectronic devices based on 2D materials have shown great advantages over lateral devices, such as higher current density, faster switch speed, and superior short-channel control. However, it is difficult to fabricate vertical device with conventional metal deposition methods due to the aggressive process usually results in damage to the contact region. Here, we develop a simple and effective metal transfer technique and fabricate p-type and n-type WSe₂ transistors by using metals with different work functions and subsequently create a vertical WSe₂ transistors with a 18-nm-thick channel, which retain good gate coupling effect. Furthermore, a vertical WSe₂ photodiode is constructed with graphene and Pt as asymmetric van der W

SUBMITTER: Song X 

PROVIDER: S-EPMC11502030 | biostudies-literature | 2023 Sep

REPOSITORIES: biostudies-literature