Color arrestor pixels for high-fidelity, high-sensitivity imaging sensors.

ABSTRACT: Silicon is the dominant material in complementary metal-oxide-semiconductor (CMOS) imaging devices because of its outstanding electrical and optical properties, well-established fabrication methods, and abundance in nature. However, with the ongoing trend toward electronic miniaturization, which demands smaller pixel sizes in CMOS image sensors, issues, such as crosstalk and reduced optical efficiency, have become critical. These problems stem from the intrinsic properties of Si, particularly its low absorption in the long wavelength range of the visible spectrum, which makes it difficult to devise effective solutions unless the material itself is changed. Recent advances in optical metasurfaces have offered new possibilities for solving these problems. In this study, we propose color arre

SUBMITTER: Cho M 

PROVIDER: S-EPMC11502032 | biostudies-literature | 2024 Jul

REPOSITORIES: biostudies-literature