Multistate Ferroelectric Diodes with High Electroresistance Based on van der Waals Heterostructures.

ABSTRACT: Some van der Waals (vdW) materials exhibit ferroelectricity, making them promising for novel nonvolatile memories (NVMs) such as ferroelectric diodes (FeDs). CuInP₂S₆ (CIPS) is a well-known vdW ferroelectric that has been integrated with graphene for memory devices. Here we demonstrate FeDs with self-rectifying, hysteretic current-voltage characteristics based on vertical heterostructures of 10 nm thick CIPS and graphene. By using vdW indium-cobalt top electrodes and graphene bottom electrodes, we achieve a high electroresistance (on- and off-state resistance ratios) of ∼10⁶, an on-state rectification ratio of 2500 for read/write voltages of 2 V/0.5 V, and a maximum output current density of 100 A/cm². These metrics compare favorably with state-o

SUBMITTER: Sarkar S 

PROVIDER: S-EPMC11503766 | biostudies-literature | 2024 Oct

REPOSITORIES: biostudies-literature