Characterizing Defects Inside Hexagonal Boron Nitride Using Random Telegraph Signals in van der Waals 2D Transistors.

ABSTRACT: Single-crystal hexagonal boron nitride (hBN) is used extensively in many two-dimensional electronic and quantum devices, where defects significantly impact performance. Therefore, characterizing and engineering hBN defects are crucial for advancing these technologies. Here, we examine the capture and emission dynamics of defects in hBN by utilizing low-frequency noise (LFN) spectroscopy in hBN-encapsulated and graphene-contacted MoS₂ field-effect transistors (FETs). The low disorder of this heterostructure allows the detection of random telegraph signals (RTS) in large device dimensions of 100 μm² at cryogenic temperatures. Analysis of gate bias- and temperature-dependent LFN data indicates that RTS originates from a single trap species within hBN. By performing multi

SUBMITTER: Huang Z 

PROVIDER: S-EPMC11503768 | biostudies-literature | 2024 Oct

REPOSITORIES: biostudies-literature