Multifunctional Reconfigurable Operations in an Ultra-Scaled Ferroelectric Negative Transconductance Transistor.

ABSTRACT: The integration of functional materials into electronic devices has become a key approach to extending Moore's law by increasing the functional density of electronic circuits. Here, we present a device technology based on ultrascaled ferroelectric, antiambipolar transistors (ferro-AAT) with robust negative transconductance, enabling a wide range of reconfigurable functionalities with applications in both the digital and analog domains. The device relies on the integration of a hafnia-based ferroelectric gate stack on a vertical nanowire tunnel field-effect transistor. Through intentional gate/source overlap and tunnel-junction engineering, we demonstrate enhanced antiambipolarity with a high negative transconductance that is reconfigurable using the nonvolatile remanent polarization of the

SUBMITTER: Zhu Z 

PROVIDER: S-EPMC11503915 | biostudies-literature | 2024 Oct

REPOSITORIES: biostudies-literature