Fabrication of Electrospun Porous TiO₂ Dielectric Film in a Ti-TiO₂-Si Heterostructure for Metal-Insulator-Semiconductor Capacitors.

ABSTRACT: The development of metal-insulator-semiconductor (MIS) capacitors requires device miniaturization and excellent electrical properties. Traditional SiO₂ gate dielectrics have reached their physical limits. In this context, high-k materials such as TiO₂ are emerging as promising alternatives to SiO₂. However, the deposition of dielectric layers in MIS capacitors typically requires high-vacuum equipment and challenging processing conditions. Therefore, in this study, we present a new method to effectively fabricate a poly(vinylidene fluoride) (PVDF)-based TiO₂ dielectric layer via electrospinning. Nano-microscale layers were formed via electrospinning by applying a high voltage to a polymer solution, and electrical properties were analyzed as a func

SUBMITTER: Yoo JU 

PROVIDER: S-EPMC11509767 | biostudies-literature | 2024 Sep

REPOSITORIES: biostudies-literature