Electrical Transport Properties of PbS Quantum Dot/Graphene Heterostructures.

ABSTRACT: The integration of PbS quantum dots (QDs) with graphene represents a notable advancement in enhancing the optoelectronic properties of quantum-dot-based devices. This study investigated the electrical transport properties of PbS quantum dot (QD)/graphene heterostructures, leveraging the high carrier mobility of graphene. We fabricated QD/graphene/SiO₂/Si heterostructures by synthesizing p-type monolayer graphene via chemical vapor deposition and spin-coating PbS QDs on the surface. Then, we used a low-temperature electrical transport measurement system to study the electrical transport properties of the heterostructure under different temperature, gate voltage, and light conditions and compared them with bare graphene samples. The results indicated that the QD/graphene samples e

SUBMITTER: Ying H 

PROVIDER: S-EPMC11510120 | biostudies-literature | 2024 Oct

REPOSITORIES: biostudies-literature