A nonvolatile magnon field effect transistor at room temperature.

ABSTRACT: Information industry is one of the major drivers of the world economy. Its rapid growth, however, leads to severe heat problem which strongly hinders further development. This calls for a non-charge-based technology. Magnon, capable of transmitting spin information without electron movement, holds tremendous potential in post-Moore era. Given the cornerstone role of the field effect transistor in modern electronics, creating its magnonic equivalent is highly desired but remains a challenge. Here, we demonstrate a nonvolatile three-terminal lateral magnon field effect transistor operating at room temperature. The device consists of a ferrimagnetic insulator (Y₃Fe₅O₁₂) deposited on a ferroelectric material [Pb(Mg_1/3Nb_2/3)_0.7Ti

SUBMITTER: Cheng J 

PROVIDER: S-EPMC11522597 | biostudies-literature | 2024 Oct

REPOSITORIES: biostudies-literature