Bottom-up Cu filling of annular through silicon vias: Microstructure and texture.

ABSTRACT: Microstructural and morphological evolution during bottom-up Cu filling of annular through silicon vias (TSV) in a CuSO₄-H₂SO₄-Cl^--poloxamine electrolyte is examined. Deposition proceeds in two distinct stages beginning with a passive-to-active state transition on the via sidewalls whose depth and ultimate thickness depends on the polymer flux. Growth is conformal or tapered with columnar grains whose width and texture differ between the outer and inner sidewalls of the annulus due to area reduction and expansion respectively. The outer sidewall and bottom surface have a preferred texture; 〈111〉//ND (via normal) and 〈110〉//CD (via circumferential). With time the sidewalls passivate while further deposition is localized to the via bottom. Bottom-u

SUBMITTER: Kim SH 

PROVIDER: S-EPMC11523005 | biostudies-literature | 2020 Mar

REPOSITORIES: biostudies-literature