Deep-ultraviolet transparent conducting SrSnO₃ via heterostructure design.

ABSTRACT: Exploration and advancements in ultrawide bandgap (UWBG) semiconductors are pivotal for next-generation high-power electronics and deep-ultraviolet (DUV) optoelectronics. Here, we used a thin heterostructure design to facilitate high conductivity due to the low electron mass and relatively weak electron-phonon coupling, while the atomically thin films ensured high transparency. We used a heterostructure comprising SrSnO₃/La:SrSnO₃/GdScO₃ (110), and applied electrostatic gating, which allow us to effectively separate charge carriers in SrSnO₃ from dopants and achieve phonon-limited transport behavior in strain-stabilized tetragonal SrSnO₃. This led to a modulation of carrier density from 10¹⁸ to 10²⁰ cm^-3

SUBMITTER: Liu F 

PROVIDER: S-EPMC11529712 | biostudies-literature | 2024 Nov

REPOSITORIES: biostudies-literature