Large unidirectional spin Hall magnetoresistance in FeNi/Pt/Bi₂Se₃ trilayers by Pt interfacial engineering.

ABSTRACT: Unidirectional spin Hall magnetoresistance (USMR) has emerged as a promising candidate for magnetoresistive random-access memory (MRAM) technology. However, the realization of high signal-to-noise output signal in USMR devices has remained a challenge, primarily due to the limited USMR effect at room temperature. In this study, we report a large USMR effect in FeNi/Pt/Bi₂Se₃ trilayers through interfacial engineering with Pt to optimize the spin current transmission efficiency and electron-magnon scattering. Our devices exhibit a USMR value that is an order of magnitude higher than previously reported systems, reaching 30.6 ppm/MA/cm² at room temperature. First-principles calculations and experimental observations suggest that the Pt layer not only preserves the spin-momentum locked topolog

SUBMITTER: Zhang Q 

PROVIDER: S-EPMC11530670 | biostudies-literature | 2024 Nov

REPOSITORIES: biostudies-literature