Engineering of Interface Barrier in Hybrid MXene/GaN Heterostructures for Schottky Diode Applications.

ABSTRACT: The Fermi level position at the interface of a heterostructure is a critical factor for device functionality, strongly influenced by surface-related phenomena. In this study, contactless electroreflectance (CER) was utilized for the first time to investigate the built-in electric field in MXene/GaN structures with the goal of understanding the carrier transfer across the MXene/GaN interface. Five MXenes with high work functions were examined: Cr₂C, Mo₂C, V₂C, V₄C₃, and Ti₃C₂. The physicochemical properties of the MXene/GaN structures were analyzed by using X-ray and UV photoelectron spectroscopies. It was shown that upon the coverage of the GaN surface by all investigated MXenes, a shift in the position of the sur

SUBMITTER: Majchrzak D 

PROVIDER: S-EPMC11533156 | biostudies-literature | 2024 Oct

REPOSITORIES: biostudies-literature