In Situ IR Spectroscopy Studies of Atomic Layer-Deposited SnO₂ on Fullerenes for Perovskite Photovoltaics.

ABSTRACT: In recent years, atomic layer deposition (ALD) has established itself as the state-of-the-art technique for the deposition of SnO₂ buffer layers grown between the fullerene electron transport layer (ETL) and the ITO top electrode in metal halide perovskite-based photovoltaics. The SnO₂ layer shields the underlying layers, i.e., the fullerene-derivative materials such as C60 and PCBM, as well as the perovskite absorber, from water ingress and damage induced by the sputtering of the transparent front contact. Our study undertakes a comprehensive investigation of the impact of SnO₂ ALD processing on fullerenes by means of in situ spectroscopic ellipsometry (SE) and transmission infrared spectroscopy (FTIR). While no difference in SnO₂ bulk pr

SUBMITTER: Bracesco AEA 

PROVIDER: S-EPMC11533177 | biostudies-literature | 2024 Oct

REPOSITORIES: biostudies-literature