Direct Growth of Wafer-Scale Self-Separated GaN on Reusable 2D Material Substrates.

ABSTRACT: Free-standing gallium nitride has been prepared using various methods; however, the removal of the original substrate is still challenging with low success rates. In this work, 2-inch free-standing GaN films are obtained by direct growth on a fluoro phlogopite mica by hydride vapor-phase epitaxy. Depending on the van der Waals (vdW) interaction between GaN and mica, the effect of the significant lattice mismatch is effectively reduced; thus, enabling the production of a high-quality wafer-scale GaN film on mica. The vdW-induced cracks at GaN-mica interface are found to be initiated near the interface so that GaN can easily separate from mica during rapid cooling. Owing to the hydrophilic nature of mica, the residual GaN on the mica can be lifted off by following deionized water treatment,

SUBMITTER: Huang CH 

PROVIDER: S-EPMC11538651 | biostudies-literature | 2024 Nov

REPOSITORIES: biostudies-literature