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Predicting the characteristics of a C<sub>2</sub>B<sub>6</sub> monolayer with ultrahigh carrier mobility.


ABSTRACT: Two-dimensional materials have excellent electronic and optical properties, suggesting absolute advantages in nanodevices. In this work, a new two-dimensional material with a puckered structure, a C2B6 monolayer, is proposed. The material presents dynamic and thermal stability calculated by first-principle simulations. Interestingly, the C2B6 monolayer possesses semiconductor behavior with an ultra-narrow bandgap of approximately 0.671 eV by HSE06 functional. Meanwhile, the hole in the C2B6 monolayer shows ultrahigh mobility at approximately 6,342 cm2⋅V-1⋅s-1 in decent transport directions, which is larger than traditional transition metal dichalcogenides materials. More importantly, the pron

SUBMITTER: Xu P 

PROVIDER: S-EPMC11540763 | biostudies-literature | 2024

REPOSITORIES: biostudies-literature