Precise p-type and n-type doping of two-dimensional semiconductors for monolithic integrated circuits.

ABSTRACT: The controllable fabrication of patterned p-type and n-type channels with precise doping control presents a significant challenge, impeding the realization of complementary metal-oxide-semiconductor (CMOS) logic using a single van der Waals material. However, such an achievement could offer substantial benefits by enabling continued transistor scaling and unprecedented interlayer interconnect technologies. In this study, we devise a precise method for two-dimensional (2D) semiconductor substitutional doping, which allows for the production of wafer-scale 2H-MoTe₂ thin films with specific p-type or n-type doping. Notably, we extend this approach to the synthesis of spatially selective doped 2H-MoTe₂ thin films via a one-step growth method, facilitating the monolithic i

SUBMITTER: Pan Y 

PROVIDER: S-EPMC11544037 | biostudies-literature | 2024 Nov

REPOSITORIES: biostudies-literature