Effect of Deposition Temperature on Zn Interstitials and Oxygen Vacancies in RF-Sputtered ZnO Thin Films and Thin Film-Transistors.

ABSTRACT: ZnO thin films were deposited using RF sputtering by varying the argon:oxygen gas flow rates and substrate temperatures. Structural, optical and electrical characterization of ZnO thin films were systematically carried out using X-Ray diffraction (XRD), scanning electron microscopy (SEM), UV-visible spectroscopy, X-Ray photoelectron spectroscopy (XPS) and Hall measurements. Film deposited at room temperature and annealed at 300 °C exhibited low O₂ incorporation with localized defects and a high percentage of Zn interstitials. A large crystalline size and fewer grain boundaries resulted in a high Hall mobility of 46.09 cm²/V-s Deposition at higher substrate temperatures resulted in improvement in O₂ incorporation through the annihilation of localized defects

SUBMITTER: Muthusamy S 

PROVIDER: S-EPMC11547206 | biostudies-literature | 2024 Oct

REPOSITORIES: biostudies-literature