Influence of the Carrier Gas Flow in the CVD Synthesis of 2-Dimensional MoS₂ Based on the Spin-Coating of Liquid Molybdenum Precursors.

ABSTRACT: Atomically thin molybdenum disulfide (MoS₂) is a two-dimensional semiconductor with versatile applications. The recent adoption of liquid molybdenum precursors in chemical vapor deposition has contributed significantly to the reproducible wafer-scale synthesis of MoS₂ monolayer and few-layer films. In this work, we study the effects of the carrier gas flow rate on the properties of two-dimensional molybdenum disulfide grown by liquid-precursor-intermediate chemical vapor deposition on SiO₂/Si substrates. We characterized the samples using Optical Microscopy, Scanning Electron Microscopy, Raman spectroscopy, and Photoluminescence spectroscopy. We analyzed samples grown with different nitrogen carrier flows, ranging from 150 to 300 sccm, and discussed the eff

SUBMITTER: Esposito F 

PROVIDER: S-EPMC11547744 | biostudies-literature | 2024 Oct

REPOSITORIES: biostudies-literature