Giant tunnel electroresistance through a Van der Waals junction by external ferroelectric polarization.

ABSTRACT: The burgeoning interest in two-dimensional semiconductors stems from their potential as ultrathin platforms for next-generation transistors. Nonetheless, there persist formidable challenges in fully obtaining high-performance complementary logic components and the underlying mechanisms for the polarity modulation of transistors are not yet fully understood. Here, we exploit both ferroelectric domain-based nonvolatile modulation of Fermi level in transitional metal dichalcogenides (MoS₂) and quantum tunneling through nanoscale hexagonal boron nitride (h-BN). Our prototype devices, termed as vertical tunneling ferroelectric field-effect transistor, utilizes a Van der Waals MoS₂/h-BN/metal tunnel junction as the channel. The Fermi level of MoS₂ is bipolarly tu

SUBMITTER: Feng G 

PROVIDER: S-EPMC11549478 | biostudies-literature | 2024 Nov

REPOSITORIES: biostudies-literature