Flexible p-Type WSe₂ Transistors with Alumina Top-Gate Dielectric.

ABSTRACT: Tungsten diselenide (WSe₂) field-effect transistors (FETs) are promising for emerging electronics because of their tunable polarity, enabling complementary transistor technology, and their suitability for flexible electronics through material transfer. In this work, we demonstrate flexible p-type WSe₂ FETs with absolute drain currents |I_D| up to 7 μA/μm. We achieve this by fabricating flexible top-gated FETs with a combined WSe₂ and metal contact transfer approach using WSe₂ grown by metal-organic chemical vapor deposition on sapphire. Despite moderate WSe₂ crystal grain size, our devices show similar or higher |I_D| and I_D on/off ratio (∼10⁵) compared to most devices with

SUBMITTER: Phung QT 

PROVIDER: S-EPMC11551950 | biostudies-literature | 2024 Nov

REPOSITORIES: biostudies-literature