Low-Defect-Density Monolayer MoS₂ Wafer by Oxygen-Assisted Growth-Repair Strategy.

ABSTRACT: Atomic chalcogen vacancy is the most commonly observed defect category in two dimensional (2D) transition-metal dichalcogenides, which can be detrimental to the intrinsic properties and device performance. Here a low-defect density, high-uniform, wafer-scale single crystal epitaxial technology by in situ oxygen-incorporated "growth-repair" strategy is reported. For the first time, the oxygen-repairing efficiency on MoS₂ monolayers at atomic scale is quantitatively evaluated. The sulfur defect density is greatly reduced from (2.71 ± 0.65) × 10¹³ down to (4.28 ± 0.27) × 10¹² cm^-2, which is one order of magnitude lower than reported as-grown MoS₂. Such prominent defect deduction is owing to the kinetically more favorable configuration of

SUBMITTER: Zhang X 

PROVIDER: S-EPMC11558109 | biostudies-literature | 2024 Nov

REPOSITORIES: biostudies-literature