Atomistic Compositional Details and Their Importance for Spin Qubits in Isotope-Purified Silicon Quantum Wells.

ABSTRACT: Understanding crystal characteristics down to the atomistic level increasingly emerges as a crucial insight for creating solid state platforms for qubits with reproducible and homogeneous properties. Here, isotope concentration depth profiles in a SiGe/²⁸Si/SiGe heterostructure are analyzed with atom probe tomography (APT) and time-of-flight secondary-ion mass spectrometry down to their respective limits of isotope concentrations and depth resolution. Spin-echo dephasing times T2echo=128μs$T_2^\mathbf {echo}=128 \,\umu\mathrm{s}$ and valley energy splittings E_VS around 200μeV$200 \,\umu\mathrm{e\mathrm{V}}$ have been observed for single spin qubits in this quantum well (QW) heterostructure, pointing toward the suppression of qubit decoherence through hyperfine interac

SUBMITTER: Klos J 

PROVIDER: S-EPMC11558133 | biostudies-literature | 2024 Nov

REPOSITORIES: biostudies-literature