Role of Point Defects and Ion Intercalation in Two-Dimensional Multilayer Transition Metal Dichalcogenide Memristors.

ABSTRACT: Two-dimensional materials, in particular transition metal dichalcogenides (TMDs), have attracted a nascent interest in the implementation of memristive architectures. In addition to being functionally similar to synapses, their nanoscale footprint promises to achieve the high density of a biological neural network in the context of neuromorphic computing. However, in order to advance from the current exploratory phase and reach reliable and sound memristive performances, an understanding of the underlying physical mechanisms in TMD memristors seems imperative. Despite the distinctive transport medium inherent to multilayer TMDs, the memristance is routinely attributed to defects or metal atoms present in the system, with their precise contribution remaining elusive. Specifically, the role

SUBMITTER: Ganeriwala MD 

PROVIDER: S-EPMC11558805 | biostudies-literature | 2024 Nov

REPOSITORIES: biostudies-literature