Proton irradiation Of Ga₂O₃ Schottky diodes and NiO/Ga₂O₃ heterojunctions.

ABSTRACT: p-NiO/n-Ga₂O₃ heterojunction (HJ) diodes exhibit much larger changes in their properties upon 1.1 MeV proton irradiation than Schottky diodes (SDs) prepared on the same material. In p-NiO/Ga₂O₃ HJ diodes, the narrow region adjacent to the HJ boundary is found to contain a high density of relatively deep centers with levels near E_C-0.17 eV and a depleted region in the immediate vicinity of the HJ boundary. The series resistance of the HJ diodes is slightly higher than for the Schottky diodes and shows a temperature dependence with activation energy ~ 0.12 eV, like the temperature dependence of the NiO film resistivity. Irradiation with 1.1 MeV protons leads to a decrease of the hole concentration in the NiO, with a high carrier removal

SUBMITTER: Polyakov AY 

PROVIDER: S-EPMC11560958 | biostudies-literature | 2024 Nov

REPOSITORIES: biostudies-literature