Ferroelectric field effect transistors based on two-dimensional CuInP₂S₆ (CIPS) and graphene heterostructures.

ABSTRACT:

Abstract

Heterostructures of two-dimensional (2D) materials comprise clean van der Waals (vdW) interfaces that can facilitate charge or energy transfer. Recently, the 2D ferroelectric CuInP₂S₆ (CIPS) has been integrated with graphene and other 2D materials to realize potentially novel low energy electronic devices. However, the influence of 2D CIPS on the properties of graphene and doping across the vdW interface has not been studied in detail. Here, we study graphene field effect transistors (FETs) with CIPS as the top gate. We find that CIPS leads to modulation of the graphene Fermi level due to local doping. We also find polarization-induced hysteresis in CIPS-gated graphene FETs. Electrical transport measurements from 50 to300 K show that above 200 K, the

SUBMITTER: Ghani MA 

PROVIDER: S-EPMC11564258 | biostudies-literature | 2024

REPOSITORIES: biostudies-literature