Hysteresis in the transfer characteristics of MoS₂ field effect transistors: gas, temperature and photo-irradiation effect.

ABSTRACT: We report the characteristic behaviors of the hysteresis observed in the transfer characteristics of back-gated field-effect transistors with an exfoliated MoS₂ channel under various conditions. We find that the hysteresis is strongly enhanced by temperature, environmental gas, or light irradiation. Our measurements reveal the characteristic hysteresis behaviors in a 1 atm oxygen environment, which we explain as an oxygen molecule facilitated charge acceptor on the MoS₂ surface. The decrease in the current value in the ON state of the device may indicate that oxygen molecules are more effective charge acceptors than nitrogen molecules. We conclude that intrinsic defects in MoS₂, such as S vacancies, which result in effective adsorbate trapping, play an impo

SUBMITTER: Al Mamun MS 

PROVIDER: S-EPMC11565423 | biostudies-literature | 2024 Nov

REPOSITORIES: biostudies-literature