Parallel Logic Operations in Electrically Tunable Two-Dimensional Homojunctions.

ABSTRACT: Two-dimensional materials show great potential for future electronics beyond silicon materials. Here, we report an exotic multiple-port device based on multiple electrically tunable planar p-n homojunctions formed in a two-dimensional (2D) ambipolar semiconductor, tungsten diselenide (WSe₂). In this device, we prepare multiple gates consisting of a global gate and several local gates, by which electrostatically induced holes and electrons are simultaneously accumulated in a WSe₂ channel, and furthermore, at the boundaries, p-n junctions are formed as directly visualized by Kelvin probe force microscopy. Therefore, in addition to the gate voltages in our device, the drain/source bias can also be used to switch the 2D WSe₂ channel on/off due to the rectificat

SUBMITTER: Chen Y 

PROVIDER: S-EPMC11565736 | biostudies-literature | 2024 Nov

REPOSITORIES: biostudies-literature