Electron-Beam Writing of Atomic-Scale Reconstructions at Oxide Interfaces.

ABSTRACT: The epitaxial growth of complex oxides enables the production of high-quality films, yet substrate choice is restricted to certain symmetry and lattice parameters, thereby limiting the technological applications of epitaxial oxides. In comparison, the development of free-standing oxide membranes gives opportunities to create novel heterostructures by nonepitaxial stacking of membranes, opening new possibilities for materials design. Here, we introduce a method for writing, with atomic precision, ionically bonded crystalline materials across the gap between an oxide membrane and a carrier substrate. The process involves a thermal pretreatment, followed by localized exposure to the raster scan of a scanning transmission electron microscopy (STEM) beam. STEM imaging and electron energy-loss s

SUBMITTER: Segantini G 

PROVIDER: S-EPMC11565737 | biostudies-literature | 2024 Nov

REPOSITORIES: biostudies-literature