Highly-efficient (>70%) and Wide-spectral (400-1700 nm) sub-micron-thick InGaAs photodiodes for future high-resolution image sensors.

ABSTRACT: This paper demonstrates the novel approach of sub-micron-thick InGaAs broadband photodetectors (PDs) designed for high-resolution imaging from the visible to short-wavelength infrared (SWIR) spectrum. Conventional approaches encounter challenges such as low resolution and crosstalk issues caused by a thick absorption layer (AL). Therefore, we propose a guided-mode resonance (GMR) structure to enhance the quantum efficiency (QE) of the InGaAs PDs in the SWIR region with only sub-micron-thick AL. The TiO_x/Au-based GMR structure compensates for the reduced AL thickness, achieving a remarkably high QE (>70%) from 400 to 1700 nm with only a 0.98 μm AL InGaAs PD (defined as 1 μm AL PD). This represents a reduction in thickness by at least 2.5 times compared to previous results while m

SUBMITTER: Geum DM 

PROVIDER: S-EPMC11568205 | biostudies-literature | 2024 Nov

REPOSITORIES: biostudies-literature