Thermally stable Bi₂Te₃/WSe₂ Van Der Waals contacts for pMOSFETs application.

ABSTRACT: Novel van der Waals (vdW) contacts formed by layered Bi₂Te₃ are found effective in improving the performance of WSe₂ pMOSFETs. As compared with conventional transition metal-based Ni/Au S/D contacts, over 10³ times on-state current improvement is achieved. vdW interface formation between Bi₂Te₃ and WSe₂ is confirmed by X-ray diffraction analysis and scanning transmission electron microscope observation. An atomically flat Bi₂Te₃/WSe₂ vdW interface, where the number of defects could be reduced as small as possible, contributes to the suppression of Fermi-level pinning caused by defect-induced gap states. Moreover, the semimetal-like characteristics of Bi₂Te₃ ar

SUBMITTER: Chang WH 

PROVIDER: S-EPMC11577051 | biostudies-literature | 2024 Nov

REPOSITORIES: biostudies-literature