All-Epitaxial Self-Assembly of Silicon Color Centers Confined Within Sub-Nanometer Thin Layers Using Ultra-Low Temperature Epitaxy.

ABSTRACT: Silicon-based color-centers (SiCCs) have recently emerged as quantum-light sources that can be combined with telecom-range Si Photonics platforms. Unfortunately, using conventional SiCC fabrication schemes, deterministic control over the vertical emitter position is impossible due to the stochastic nature of the required ion-implantation(s). To overcome this bottleneck toward high-yield integration, a radically innovative creation method is demonstrated for various SiCCs with excellent optical quality, solely relying on the epitaxial growth of Si and C-doped Si at atypically-low temperatures in an ultra-clean growth environment. These telecom emitters can be confined within sub-nm thick epilayers embedded within a highly crystalline Si matrix at arbitrary vertical positions. Tuning growth

SUBMITTER: Aberl J 

PROVIDER: S-EPMC11602677 | biostudies-literature | 2024 Nov

REPOSITORIES: biostudies-literature