Stacking selected polarization switching and phase transition in vdW ferroelectric α-In₂Se₃ junction devices.

ABSTRACT: The structure and dynamics of ferroelectric domain walls are essential for polarization switching in ferroelectrics, which remains relatively unexplored in two-dimensional ferroelectric α-In₂Se₃. Interlayer interactions engineering via selecting the stacking order in two-dimensional materials allows modulation of ferroelectric properties. Here, we report stacking-dependent ferroelectric domain walls in 2H and 3R stacked α-In₂Se₃, elucidating the resistance switching mechanism in ferroelectric semiconductor-metal junction devices. In 3R α-In₂Se₃, the in-plane movement of out-of-plane ferroelectric domain walls yield a large hysteresis window. Conversely, 2H α-In₂Se₃ devices favor in-plane domain walls an

SUBMITTER: Wu Y 

PROVIDER: S-EPMC11612147 | biostudies-literature | 2024 Dec

REPOSITORIES: biostudies-literature