Tunable GaAs_<i>x</i>P_1-<i>x</i> Quantum-Dot Emission in Wurtzite GaP Nanowires.

ABSTRACT: We present a fairly understudied material system suitable for the realization of tunable quantum-dot (QD) emission within the visible-to-near-infrared spectrum (in particular, in the 650-720 nm wavelength range). Specifically, crystal-pure wurtzite gallium phosphide (GaP) nanowires (NWs) are synthesized, incorporating single gallium arsenide phosphide (GaAs_xP_1-x) QDs of various compositions. Detailed growth procedures are outlined, accompanied by an analysis of the synthesis challenges encountered during the realization of these nanostructures and the strategies to solve them. Notably, a great degree of control over the shape and composition of the ternary alloy QD is achieved, enabling a well-defined confinement and the tunability of the emission wavele

SUBMITTER: Sorodoc RA 

PROVIDER: S-EPMC11615845 | biostudies-literature | 2024 Nov

REPOSITORIES: biostudies-literature