Enabling 2D Electron Gas with High Room-Temperature Electron Mobility Exceeding 100 cm² Vs^-1 at a Perovskite Oxide Interface.

ABSTRACT: In perovskite oxide heterostructures, bulk functional properties coexist with emergent physical phenomena at epitaxial interfaces. Notably, charge transfer at the interface between two insulating oxide layers can lead to the formation of a 2D electron gas (2DEG) with possible applications in, e.g., high-electron-mobility transistors and ferroelectric field-effect transistors. So far, the realization of oxide 2DEGs is, however, largely limited to the interface between the single-crystal substrate and epitaxial film, preventing their deliberate placement inside a larger device architecture. Additionally, the substrate-limited quality of perovskite oxide interfaces hampers room-temperature (RT) 2DEG performance due to notoriously low electron mobility. In this work, the controlled creation of

SUBMITTER: Hoffmann G 

PROVIDER: S-EPMC11636175 | biostudies-literature | 2024 Dec

REPOSITORIES: biostudies-literature