The Effect of TiO<sub>2</sub> on the Dielectric Performance of ZrO<sub>2</sub> and Nb<sub>2</sub>O<sub>5</sub> Pre-Doped CaCu<sub>3</sub>Ti<sub>4</sub>O<sub>12</sub> Ceramics.
Ontology highlight
ABSTRACT: In this work, the effects of different sintering temperatures and TiO2 concentrations on the dielectric properties of ZrO2 and Nb2O5 pre-doped CaCu3Ti4O12 (CCTO) ceramics were investigated. These doped ceramics were sintered at temperatures of 1020, 1030, and 1040 °C, exhibiting the lowest dielectric loss of 0.01, which consistently remained below 0.03 across a wide frequency range from 10 to 105 Hz. Simultaneously, they maintained a high dielectric constant of more than 3000 and remarkably met the requirements for an X8P capacitor (Δε' ≤ ±10% at temperature range from -55 to 150 °C). It was clarified that TiO2 doping increased grain boundary resistance, leading to the reduced dielectric loss
SUBMITTER: Zhang G
PROVIDER: S-EPMC11642029 | biostudies-literature | 2024 Nov
REPOSITORIES: biostudies-literature
ACCESS DATA
