High-Performance Memristive Synapse Based on Space-Charge-Limited Conduction in LiNbO₃.

ABSTRACT: Advancing neuromorphic computing technology requires the development of versatile synaptic devices. In this study, we fabricated a high-performance Al/LiNbO₃/Pt memristive synapse and emulated various synaptic functions using its primary key operating mechanism, known as oxygen vacancy-mediated valence charge migration (V_O-VCM). The voltage-controlled V_O-VCM induced space-charge-limited conduction and self-rectifying asymmetric hysteresis behaviors. Moreover, the device exhibited voltage pulse-tunable multi-state memory characteristics because the degree of V_O-VCM was dependent on the applied pulse parameters (e.g., polarity, amplitude, width, and interval). As a result, synaptic functions such as short-term memory, dynamic range-tunable long-ter

SUBMITTER: Lee Y 

PROVIDER: S-EPMC11642943 | biostudies-literature | 2024 Nov

REPOSITORIES: biostudies-literature