Overestimation of Operational Stability in Polymer-Based Organic Field-Effect Transistors Caused by Contact Resistance.

ABSTRACT: The bias-stress effects of bottom-gate top-contact polymer-based organic field-effect transistors (OFETs) with different channel lengths (50-500 μm) were evaluated by repeating cycles of prolonged on-state gate-bias application and transfer characteristics measurements in the linear regime. The thicknesses of poly(didodecylquaterthiophene-alt-didodecylbithiazole) active layers were 26 and 37 nm. All OFETs exhibited nonlinear (nonideal) transfer characteristics with a maximum transconductance within the gate-source voltage sweep range. Both a shift in threshold voltage (V_th^lin) and a reduction in field-effect charge carrier mobility (μ^lin) were apparently observed during the bias-stress application. When μ^lin and V_th

SUBMITTER: Sakamoto K 

PROVIDER: S-EPMC11648940 | biostudies-literature | 2024 Dec

REPOSITORIES: biostudies-literature