Simultaneous Suppression of Phonon Transport and Carrier Concentration for Efficient Rhombohedral GeTe Thermoelectric.

ABSTRACT: Superior electronic performance due to the highly degenerated Σ valence band (N_v∼12) makes rhombohedral GeTe a promising low-temperature (<600 K) thermoelectric candidate. Minimizing lattice thermal conductivity (κ_L) is an essential route for enhancing thermoelectric performance, but the temperature-dependent κ_L, corelated to T^-1, makes its reduction difficult at low temperature. In this work, a room-temperature κ_L of ≈0.55 W m^-1-K^-1, the lowest ever reported in GeTe-based thermoelectric, is realized in (Ge_{1- y}Sb_yTe)_{1- x}(Cu₈GeSe₆)_x, primarily due to strong phonon scattering induced by point defects and precipitates. Simultaneou

SUBMITTER: Qi X 

PROVIDER: S-EPMC11653633 | biostudies-literature | 2024 Dec

REPOSITORIES: biostudies-literature