Giant anisotropic piezoresponse of layered ZrSe₃.

ABSTRACT: We investigated the effect of uniaxial strain on the electrical properties of few-layer ZrSe₃ devices under compressive and tensile strains applied up to ±0.62% along different crystal directions. We observed that the piezoresponse, the change in resistance upon application of strain, of ZrSe₃ strongly depends on both the direction in which electrical transport occurs and the direction in which uniaxial strain is applied. Notably, a remarkably high anisotropy in the gauge factor for a device with the transport occurring along the b-axis of ZrSe₃ with GF = 68 when the strain is applied along the b-axis was obtained, and GF = 4 was achieved when strain is applied along the a-axis. This leads to an anisotropy ratio of almost 90%. Devices w

SUBMITTER: Radatovic B 

PROVIDER: S-EPMC11667461 | biostudies-literature | 2025 Jan

REPOSITORIES: biostudies-literature