Pseudo-Wet Plasma Mechanism Enabling High-Throughput Dry Etching of SiO₂ by Cryogenic-Assisted Surface Reactions.

ABSTRACT: Manufacturing semiconductor devices requires advanced patterning technologies, including reactive ion etching (RIE) based on the synergistic interactions between ions and etch gas. However, these interactions weaken as devices continuously scale down to sub-nanoscale, primarily attributed to the diminished transport of radicals and ions into the small features. This leads to a significant decrease in etch rate (ER). Here, a novel synergistic interaction involving ions, surface-adsorbed chemistries, and materials at cryogenic temperatures is found to exhibit a significant increase in the ER of SiO₂ using CF₄/H₂ plasmas. The ER increases twofold when plasma with H₂/(CF₄ + H₂) = 33% is used and the substrate temperature is lowe

SUBMITTER: Hsiao SN 

PROVIDER: S-EPMC11672179 | biostudies-literature | 2024 Dec

REPOSITORIES: biostudies-literature