Ge Epitaxy at Ultralow Growth Temperatures Enabled by a Pristine Growth Environment.

ABSTRACT: Germanium (Ge), the next-in-line group-IV material, bears great potential to add functionality and performance to next-generation nanoelectronics and solid-state quantum transport based on silicon (Si) technology. Here, we investigate the direct epitaxial growth of two-dimensional high-quality crystalline Ge layers on Si deposited at ultralow growth temperatures (T _Ge = 100-350 °C) and pristine growth pressures (≲10^-10 mbar). First, we show that a decreasing T _Ge does not degrade the crystal quality of homoepitaxial Ge/Ge(001) by comparing the point defect density using positron annihilation lifetime spectroscopy. Subsequently, we present a systematic investigation of the Ge/Si(001) heteroepitaxy, varying the Ge coverage (Θ_Ge, 1, 2,

SUBMITTER: Wilflingseder C 

PROVIDER: S-EPMC11673087 | biostudies-literature | 2024 Dec

REPOSITORIES: biostudies-literature