Thermally Induced Irreversible Disorder in Interlayer Stacking of γ-GeSe.

ABSTRACT: The interlayer stacking shift in van der Waals (vdW) crystals represents an important degree of freedom to control various material properties, including magnetism, ferroelectricity, and electrical properties. On the other hand, the structural phase transitions driven by interlayer sliding in vdW crystals often exhibit thickness-dependent, sample-specific behaviors with significant hysteresis, complicating a clear understanding of their intrinsic nature. Here, the stacking configuration of the recently identified vdW crystal, γ-GeSe, is investigated, and the disordering manipulation of stacking sequence is demonstrated. It is observed that the well-ordered AB' stacking configuration in as-synthesized samples undergoes irreversible disordering upon Joule heating via electrical biasing or th

SUBMITTER: Kim J 

PROVIDER: S-EPMC11673445 | biostudies-literature | 2024 Dec

REPOSITORIES: biostudies-literature