A simple phenomenological account for the metal-induced crystallization of amorphous Ge and Si films.

ABSTRACT: When combined with certain metal species, films of amorphous Ge or Si can have their typical crystallization temperatures decreased, by a factor of three or four, down to ~ 200 °C. The phenomenon is called metal-induced crystallization (MIC) and, since its first observation in the late 1960's, shows a great technological potential in producing (poly-)crystalline films of Ge or Si onto low-melting point substrates under reduced energy conditions. From the scientific point of view, the microscopic mechanisms behind the MIC phenomenon (still) represents a scientific challenge, where most of the proposed models are invariably influenced by the samples details giving the impression that they only apply to very specific metal-semiconductor combinations and/or circumstances. The lack of a simple-

SUBMITTER: Zanatta AR 

PROVIDER: S-EPMC11681152 | biostudies-literature | 2024 Dec

REPOSITORIES: biostudies-literature