Grain engineering for efficient near-infrared perovskite light-emitting diodes.

ABSTRACT: Metal halide perovskites show promise for next-generation light-emitting diodes, particularly in the near-infrared range, where they outperform organic and quantum-dot counterparts. However, they still fall short of costly III-V semiconductor devices, which achieve external quantum efficiencies above 30% with high brightness. Among several factors, controlling grain growth and nanoscale morphology is crucial for further enhancing device performance. This study presents a grain engineering methodology that combines solvent engineering and heterostructure construction to improve light outcoupling efficiency and defect passivation. Solvent engineering enables precise control over grain size and distribution, increasing light outcoupling to ~40%. Constructing 2D/3D heterostructures with a conj

SUBMITTER: Baek SD 

PROVIDER: S-EPMC11685452 | biostudies-literature | 2024 Dec

REPOSITORIES: biostudies-literature