Sliding ferroelectric memories and synapses based on rhombohedral-stacked bilayer MoS₂.

ABSTRACT: Recent advances have uncovered an exotic sliding ferroelectric mechanism, which endows to design atomically thin ferroelectrics from non-ferroelectric parent monolayers. Although notable progress has been witnessed in understanding the fundamental properties, functional devices based on sliding ferroelectrics remain elusive. Here, we demonstrate the rewritable, non-volatile memories at room-temperature with a two-dimensional (2D) sliding ferroelectric semiconductor of rhombohedral-stacked bilayer MoS₂. The 2D sliding ferroelectric memories (SFeMs) show superior performances with a large memory window of >8 V, a high conductance ratio of above 10⁶, a long retention time of >10 years, and a programming endurance greater than 10⁴ cycles. Remarkably, flexible S

SUBMITTER: Li X 

PROVIDER: S-EPMC11685460 | biostudies-literature | 2024 Dec

REPOSITORIES: biostudies-literature