Multifunctional 2D FETs exploiting incipient ferroelectricity in freestanding SrTiO₃ nanomembranes at sub-ambient temperatures.

ABSTRACT: Incipient ferroelectricity bridges traditional dielectrics and true ferroelectrics, enabling advanced electronic and memory devices. Firstly, we report incipient ferroelectricity in freestanding SrTiO₃ nanomembranes integrated with monolayer MoS₂ to create multifunctional devices, demonstrating stable ferroelectric order at low temperatures for cryogenic memory devices. Our observation includes ultra-fast polarization switching (~10 ns), low switching voltage (<6 V), over 10 years of nonvolatile retention, 100,000 endurance cycles, and 32 conductance states (5-bit memory) in SrTiO₃-gated MoS₂ transistors at 15 K and up to 100 K. Additionally, we exploit room-temperature weak polarization switching, a feature of incipient ferroelectricity, to cons

SUBMITTER: Sen D 

PROVIDER: S-EPMC11685672 | biostudies-literature | 2024 Dec

REPOSITORIES: biostudies-literature