Identifying and understanding the nonlinear behavior of memristive devices.

ABSTRACT: Nonlinearity is a crucial characteristic for implementing hardware security primitives or neuromorphic computing systems. The main feature of all memristive devices is this nonlinear behavior observed in their current-voltage characteristics. To comprehend the nonlinear behavior, we have to understand the coexistence of resistive, capacitive, and inertia (virtual inductive) effects in these devices. These effects originate from corresponding physical and chemical processes in memristive devices. A physics-inspired compact model is employed to model and simulate interface-type RRAMs such as Au/BiFeO[Formula: see text]/Pt/Ti, Au/Nb[Formula: see text]O[Formula: see text]/Al[Formula: see text]O[Formula: see text]/Nb, while accounting for the modeling of capacitive and inertia effects. The simu

SUBMITTER: Yarragolla S 

PROVIDER: S-EPMC11686099 | biostudies-literature | 2024 Dec

REPOSITORIES: biostudies-literature