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Ultra robust negative differential resistance memristor for hardware neuron circuit implementation.


ABSTRACT: Neuromorphic computing holds immense promise for developing highly efficient computational approaches. Memristor-based artificial neurons, known for due to their straightforward structure, high energy efficiency, and superior scalability, which enable them to successfully mimic biological neurons with electrical devices. However, the reliability of memristors has always been a major obstacle in neuromorphic computing. Here, we propose an ultra-robust and efficient neuron of negative differential resistance (NDR) memristor based on AlAs/In0.8Ga0.2As/AlAs quantum well (QW) structure, which has super stable performance such as low variation (0.264%), high temperature resistance (400 °C) and high endurance. The NDR devices can cycle more than 1011 switching cyc

SUBMITTER: Pei Y 

PROVIDER: S-EPMC11696043 | biostudies-literature | 2025 Jan

REPOSITORIES: biostudies-literature