Realizing high power factor and thermoelectric performance in band engineered AgSbTe₂.

ABSTRACT: AgSbTe₂ is a promising p-type thermoelectric material operating in the mid-temperature regime. To further enhance its thermoelectric performance, previous research has mainly focused on reducing lattice thermal conductivity by forming ordered nanoscale domains for instance. However, the relatively low power factor is the main limitation affecting the power density of AgSbTe₂-based thermoelectric devices. In this work, we demonstrate that hole-doped AgSbTe₂ with Sn induces the formation of a new impurity band just above the valence band maximum. This approach significantly improves the electrical transport properties, contrary to previous strategies that focused on reducing lattice thermal conductivity. As a result, we achieve a record-high power factor of 2

SUBMITTER: Zhang Y 

PROVIDER: S-EPMC11696114 | biostudies-literature | 2025 Jan

REPOSITORIES: biostudies-literature