Harnessing orbital Hall effect in spin-orbit torque MRAM.

ABSTRACT: Spin-Orbit Torque (SOT) Magnetic Random-Access Memory (MRAM) devices offer improved power efficiency, nonvolatility, and performance compared to static RAM, making them ideal, for instance, for cache memory applications. Efficient magnetization switching, long data retention, and high-density integration in SOT MRAM require ferromagnets (FM) with perpendicular magnetic anisotropy (PMA) combined with large torques enhanced by Orbital Hall Effect (OHE). We have engineered a PMA [Co/Ni]₃ FM on selected OHE layers (Ru, Nb, Cr) and investigated the potential of theoretically predicted larger orbital Hall conductivity (OHC) to quantify the torque and switching current in OHE/[Co/Ni]₃ stacks. Our results demonstrate a  ~30% enhancement in damping-like torque efficiency with

SUBMITTER: Gupta R 

PROVIDER: S-EPMC11696791 | biostudies-literature | 2025 Jan

REPOSITORIES: biostudies-literature